ISBN 978-3-8439-2239-5

978-3-8439-2239-5, Reihe Physik

Daniel Hänschke
Development and Correlative Application of X-Ray Diffraction Laminography

195 Seiten, Dissertation Karlsruher Institut für Technologie (2015), Softcover, A5

Zusammenfassung / Abstract

The main objective of the presented work is the development of X-ray diffraction laminography and the demonstration of its application potential. The method is aimed on the non-destructive 3D imaging of crystal defects, in particular complex dislocations networks in almost perfect monocrystals, which play an important role in modern semiconductor technology. Furthermore, the approach provides access to large crystal volumes without the need for sample dissection, even for considerable lateral sample extensions like common for wafers.

Going beyond the characterization of purely geometrical aspects, a correlative approach is proposed; it fuses the 3D information from diffraction laminography with data obtained by means of complementary imaging methods, namely X-ray white-beam topography and visible light circular polarized differential interference contrast microscopy. In this way, a comprehensive picture of the investigated structures is compiled, which includes the intrinsic Burgers vector distribution as well as the relation between internal crystallographic bulk and structural surface properties.

Finally, the developed method is exemplarily applied to the detailed characterization of a silicon wafer at the onset of thermal slip, the avoidance or at least control of which is of considerable relevance for modern microelectronic device fabrication. Here details like cross gliding and interacting dislocation loops are revealed and the observed structures are compared to predictions of theoretical models.