ISBN 978-3-8439-4782-4

978-3-8439-4782-4, Reihe Physik

Zhihua Huang
Electrically pumped AlGaInP-based semiconductor lasers in the red-spectral range: large-area surface-emitting laser and quantum dot edge-emitting laser

312 Seiten, Dissertation Universität Stuttgart (2020), Softcover, A5

Zusammenfassung / Abstract

In the present scientific work, the electrically pumped AlGaInP-based semiconductor lasers emitting in the red-spectral range (650 nm-670 nm) were developed. The first goal of this study was to develop and realize the high-power vertical-cavity surface-emitting laser (VCSEL) with the bottom-emitting structure, which can support a uniform or even Gaussian-like charge carrier distribution in a large scale of emission. The design, epitaxy, fabrication and characterization of such devices were presented in detail. The significant improvements on the output power and output beam quality can be found in the new designed structure. An additional intention of this thesis was to explore the InP/AlGaInP quantum dot (QD) properties in the edge-emitting laser structures at around 660 nm, which can provide the design guidelines for the future QD electro-optical devices in this spectral range. To determine the influences of barrier materials, the performances of the single-layer InP/AlGaInP QD laser structures with different Al-content barriers were analyzed and compared. In order to improve the performances of laser devices with high Al-contained barriers, the bilayer vertically stacked InP/AlGaInP QD lasers were investigated, which mainly focused on the influences of spacer layer thickness between the QD layers.